| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,709 pcs
|
2709 pcs | On Request | 1 | On Request | On Request | 0534+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Thermal Resistance | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor SP8K2TB is a dual N-channel MOSFET featuring a 30V drain-source voltage and a continuous drain current of 6A. This device is constructed using Silicon N-channel MOS FET technology and is housed in a compact 8-SOIC surface-mount package.
Key electrical characteristics include a low Rds On of 30mOhm at 6A and 10V, a gate threshold voltage of 2.5V maximum at 1mA, and a gate charge of 10.1nC maximum at 5V. The MOSFET also incorporates a built-in G-S protection diode for enhanced reliability.
Applications for the SP8K2TB include general power switching and DC/DC converters. Its surface-mount 8-SOIC package (5.0mm x 6.0mm) is suitable for automated assembly processes. The device operates within a channel temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
Maximum channel temperature is 150°C, storage temperature range is -55 to +150°C.
6A continuous, 24A pulsed.
30mOhm maximum.
10.1nC typical.