| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor SP8K2FU6TB is a dual N-channel MOSFET with a drain-source voltage rating of 30V and a continuous drain current of 6A. This device is suitable for power switching and DC/DC converter applications.
Key electrical characteristics include a low on-resistance, with a maximum Rds(on) of 30mOhm at 6A and 10V Vgs. The gate threshold voltage is typically 2.5V at 1mA. It also features a built-in gate-source protection diode and a body diode with a forward voltage of 1.2V at 6.4A.
The SP8K2FU6TB is housed in a compact 8-SOIC surface-mount package, measuring 5.0mm x 6.0mm. The operating temperature range is up to 150°C (TJ). Its structure is Silicon N-channel MOS FET.
This MOSFET is designed for efficient power switching and is ideal for applications requiring compact and reliable performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V drain-source voltage.
8-SOIC (0.154", 3.90mm Width) surface mount package.
Channel temperature up to 150°C, storage temperature -55°C to +150°C.
Maximum 2.5V at Vds=10V, Id=1mA.
30mOhm max at Vgs=10V, Id=6A; 42mOhm at Vgs=4.5V; 47mOhm at Vgs=4V.
10.1nC at Vgs=5V, Id=6A.
520pF at Vds=10V.