| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,100 pcs
|
7100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,702 pcs
|
3702 pcs | On Request | 1 | On Request | On Request | 1051+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Forward Voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Thermal Resistance | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The ROHM Semiconductor SP8K1TB is a dual N-channel MOSFET housed in a compact 8-SOIC package. This device is engineered for efficient power switching and DC/DC converter applications.
Key electrical specifications include a drain-source voltage (Vdss) of 30V and a continuous drain current of 5A. The MOSFET exhibits a low on-resistance, with a maximum of 51mOhm at 5A and 10V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA, and the gate charge (Qg) is a maximum of 5.5nC at 5V.
With a total power dissipation of 2W and an operating temperature range up to 150°C, the SP8K1TB is suitable for demanding environments. The device also includes a built-in G-S protection diode. Its surface-mount package facilitates integration into compact circuit designs.
Applications include general power switching and DC/DC conversion circuits where space and efficiency are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
8-SOIC surface-mount package
150°C
2.5V maximum
5A continuous
20A pulsed
1.2V