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SP8J1TB The ROHM Semiconductor SP8J1TB is a dual P-channel MOSFET designed for power switching applications. It features a 30V drain-source voltage and 5A continuous drain current.
Mfr Part #:

SP8J1TB

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor SP8J1TB is a dual P-channel MOSFET designed for power switching applications. It features a 30V drain-source voltage and 5A continuous drain current.
✓ Total Stock: 5,000 pcs
$ Price Range: $1.64

SP8J1TB Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request 05+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SP8J1TB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Forward Voltage
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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SP8J1TB Description

Short technical summary and product information.

The ROHM Semiconductor SP8J1TB is a dual P-channel MOSFET designed for power switching and DC-DC converter applications. It offers a low on-resistance of 42mOhm at 5A and 10V gate drive, with a drain-source voltage rating of 30V.

 

This MOSFET supports low voltage drive with a gate threshold voltage typically around 1V to 2.5V. It is housed in a high-power 8-SOIC package, suitable for surface mounting. The device provides high-speed switching capabilities, making it efficient for various power management tasks.

 

Key electrical characteristics include a typical input capacitance of 1400pF and a total gate charge of 3.5nC. The operating temperature range is up to 150°C, ensuring reliability in demanding environments. Its configuration as a dual P-channel array makes it versatile for complex circuit designs.

SP8J1TB Quick Information

Product Type: MOSFET
Canonical Name: SP8J1TB Dual P-Channel MOSFET
Subcategory: Dual P-Channel

SP8J1TB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SP8J1TB Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SP8J1TB Features

  • Dual P-channel MOSFET configuration.
  • 30V drain-source voltage rating.
  • 5A continuous drain current capability.
  • Low on-resistance: 42mOhm max.
  • Surface mount 8-SOIC package.

SP8J1TB Applications

  • Suitable for power switching circuits.
  • Ideal for DC-DC converter designs.
  • Supports low voltage drive applications.
  • High-speed switching performance.

SP8J1TB FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SP8J1TB?

The maximum drain-source voltage is -30V.

What package is the SP8J1TB available in?

The SP8J1TB is available in an 8-SOIC surface mount package.

What is the operating temperature range of the SP8J1TB?

The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.

What is the on-resistance of the SP8J1TB?

The maximum on-resistance is 42mOhm at VGS=-10V and ID=-5A, 56mOhm at VGS=-4.5V, and 63mOhm at VGS=-4V.

What is the gate threshold voltage of the SP8J1TB?

The gate threshold voltage is typically -1V, with a maximum of 2.5V at ID=-1mA.

What is the drain current rating of the SP8J1TB?

The continuous drain current is -5A, and the pulsed drain current is ±20A.

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