| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel |
The XINER SP25N135T is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for power electronic applications. It features a high breakdown voltage of 1350V and a maximum continuous collector current of 25A, making it suitable for demanding switching applications.
The device has a typical gate threshold voltage of 6.5V and a maximum collector-emitter saturation voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 25A collector current. These electrical characteristics ensure efficient power handling and switching performance.
The SP25N135T is housed in a TO-3PN package, which is a standard through-hole mounting type, facilitating integration into various circuit designs. Its robust construction and specified parameters make it a reliable component for power conversion and control systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.81 | $0.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the SP25N135T is 1350V.
The maximum continuous collector current (Ic max) of the SP25N135T is 25A.
The typical gate threshold voltage for the XINER SP25N135T is 6.5V.
The maximum Vce(on) for the SP25N135T is 2.1V at 15V Vge and 25A Ic.
The SP25N135T uses Field Stop IGBT technology.
The SP25N135T is available in a TO-3PN package.