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SNXH80T120L2Q0P2G The On Semiconductor SNXH80T120L2Q0P2G is an IGBT module with a 1200V collector-emitter breakdown voltage and a maximum collector current of 67A. It is designed for chassis mounting.
Mfr Part #:

SNXH80T120L2Q0P2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SNXH80T120L2Q0P2G is an IGBT module with a 1200V collector-emitter breakdown voltage and a maximum collector current of 67A. It is designed for chassis mounting.
✓ Total Stock: 2,616 pcs
$ Price Range: $103.07

SNXH80T120L2Q0P2G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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2,616 pcs
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SNXH80T120L2Q0P2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
IGBT Type
Input
Input Capacitance (Cies) @ Vce
Mounting Type
NTC Thermistor
Operating Temperature
Power
Supplier Device Package
Vce(on) (Max) @ Vge, Ic
Voltage
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SNXH80T120L2Q0P2G Description

Short technical summary and product information.

The On Semiconductor SNXH80T120L2Q0P2G is an IGBT module designed for power electronics applications. It features a high collector-emitter breakdown voltage of 1200V and a maximum collector current of 67A, with a maximum power dissipation of 158W.

 

This module is configured as a Three Level Inverter and utilizes Trench Field Stop IGBT technology. It has a Vce(on) maximum of 2.85V at 15V/80A and a collector cutoff current of 300µA. The input capacitance (Cies) is 19.4nF at 20V.

 

Designed for chassis mounting, the SNXH80T120L2Q0P2G comes in a 20-PIM/Q0PACK package measuring 55x32.5. It operates at temperatures up to 175°C (TJ) and includes an NTC thermistor. The input is standard.

SNXH80T120L2Q0P2G Quick Information

Product Type: IGBT Module
Canonical Name: SNXH80T120L2Q0P2G IGBT Module
Subcategory: IGBT Modules

SNXH80T120L2Q0P2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SNXH80T120L2Q0P2G Estimated Pricing

Qty Low High
1+ $103.07 $103.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

SNXH80T120L2Q0P2G Features

  • 1200V collector-emitter breakdown voltage.
  • 67A maximum collector current.
  • 158W maximum power dissipation.
  • Chassis mountable module package.
  • Trench Field Stop IGBT technology.

SNXH80T120L2Q0P2G Applications

  • Used in motor drive inverters.
  • Suitable for power conversion systems.
  • Ideal for industrial high-voltage switching.
  • Applicable in renewable energy inverters.

SNXH80T120L2Q0P2G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage of SNXH80T120L2Q0P2G?

1200V.

What is the maximum collector current?

67A.

What is the maximum power dissipation?

158W.

What is the saturation voltage at 80A?

2.85V at 15V gate-emitter voltage.

What is the input capacitance?

19.4nF at 20V collector-emitter voltage.

What is the maximum operating junction temperature?

175°C.

What package type does the SNXH80T120L2Q0P2G use?

20-PIM/Q0PACK module with chassis mount.

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