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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
92,000 pcs
|
92000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 1.0 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0) | |
| Collector Current - Quiescent | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SNST3904DXV6T1G is a dual NPN bipolar junction transistor array from ON Semiconductor designed for general purpose amplification and switching applications. It offers a collector-emitter voltage rating of 40V and a continuous collector current of 200mA. The device provides a minimum DC current gain of 100 at 10mA and a saturation voltage of 300mV at 50mA.
With a transition frequency of 300MHz, this transistor array is suitable for moderate speed switching and amplification tasks. Each transistor within the array has independent collector and emitter terminals but shares a common substrate, typical for dual-transistor packages.
Housed in a compact SOT-563 surface mount package, the device can dissipate up to 357mW and operate over a junction temperature range of -55°C to 150°C. This makes it ideal for space-constrained applications in consumer, industrial, and portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C.
40 Vdc.
SOT-563.
200 mAdc.
100 at Ic=10mA, Vce=1V.
300 MHz.
357 mW at TA=25°C (one junction heated).