SNSS40600CF8T1G The On Semiconductor SNSS40600CF8T1G is a PNP bipolar junction transistor designed for surface mount applications. It features a 40V collector-emitter breakdown voltage and a maximum collector current of 6A.
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SNSS40600CF8T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SNSS40600CF8T1G is a PNP bipolar junction transistor designed for surface mount applications. It features a 40V collector-emitter breakdown voltage and a maximum collector current of 6A.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.05

SNSS40600CF8T1G Available from 1 distributor

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✓ Non-Authorised
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SNSS40600CF8T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SNSS40600CF8T1G Description

Short technical summary and product information.

The SNSS40600CF8T1G from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in an 8-SMD, Flat Lead package, specifically a ChipFET, designed for surface mounting.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 6A. The transistor exhibits a Vce saturation of 220mV at 400mA and 4A, with a minimum DC current gain (hFE) of 220 at 1A and 2V. Its transition frequency is rated at 100MHz.

 

This component is supplied in a Tape & Reel package. The RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1 Unlimited. The REACH status is REACH Unaffected.

SNSS40600CF8T1G Quick Information

Product Type: PNP Transistor
Canonical Name: SNSS40600CF8T1G PNP Transistor
Subcategory: Bipolar (BJT) - Single

SNSS40600CF8T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SNSS40600CF8T1G Estimated Pricing

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1+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

SNSS40600CF8T1G Features

  • PNP bipolar junction transistor.
  • 40V collector-emitter breakdown voltage.
  • 6A maximum collector current.
  • Surface mount ChipFET package.
  • RoHS3 compliant.

SNSS40600CF8T1G Applications

  • Power load switching in portable devices.
  • Amplifier output and driver stages.
  • Relay and solenoid driving circuits.
  • Signal amplification in audio or sensor circuits.

SNSS40600CF8T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the SNSS40600CF8T1G?

The maximum collector-emitter breakdown voltage is 40V.

What is the maximum continuous collector current?

The maximum collector current is 6A.

What is the power dissipation rating?

The maximum power dissipation is 830mW.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain is 220 at a collector current of 1A and collector-emitter voltage of 2V.

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 220mV at a base current of 400mA and collector current of 4A.

What is the transition frequency?

The transition frequency is 100MHz.

What package is the SNSS40600CF8T1G available in?

It is supplied in an 8-SMD flat-lead ChipFET package for surface-mount mounting.

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