| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The SNSS40600CF8T1G from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in an 8-SMD, Flat Lead package, specifically a ChipFET, designed for surface mounting.
Key electrical characteristics include a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 6A. The transistor exhibits a Vce saturation of 220mV at 400mA and 4A, with a minimum DC current gain (hFE) of 220 at 1A and 2V. Its transition frequency is rated at 100MHz.
This component is supplied in a Tape & Reel package. The RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1 Unlimited. The REACH status is REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 40V.
The maximum collector current is 6A.
The maximum power dissipation is 830mW.
The minimum DC current gain is 220 at a collector current of 1A and collector-emitter voltage of 2V.
The maximum collector-emitter saturation voltage is 220mV at a base current of 400mA and collector current of 4A.
The transition frequency is 100MHz.
It is supplied in an 8-SMD flat-lead ChipFET package for surface-mount mounting.