| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,188 pcs
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1188 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
170 pcs
|
170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SNRVBD660CTT4G from On Semiconductor is a Schottky barrier rectifier designed for high-efficiency switching power applications. It offers a peak repetitive reverse voltage of 60V and an average rectified forward current of 6A per device.
This device features extremely fast switching speeds and a low forward voltage drop, making it suitable for use in switching power supplies, inverters, and as free-wheeling diodes. The rectifier is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
Key electrical characteristics include a 75A nonrepetitive peak surge current and an operating temperature range of -65°C to 175°C. The Schottky barrier technology with avalanche guardrings ensures reliability. The DPAK package is designed for efficient heat dissipation in surface mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
6 A at a case temperature of 130°C.
700 mV at a forward current of 3 A.
75 A maximum.
-65°C to 175°C.
Schottky diodes in a common cathode configuration.
TO-252-3 (DPak) surface mount package.