| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon SN7002N is a P-Channel MOSFET designed for general-purpose switching applications. It offers a drain-source breakdown voltage of 60V and a continuous drain current of 200mA, making it suitable for low-power circuits.
Key electrical characteristics include a drain-source on-resistance of 5 Ohms and a gate-source threshold voltage of 800mV. The device operates with a gate-source voltage of up to 10V and has a power dissipation rating of 0.36W.
This MOSFET is housed in a small PG-SOT-23-3 package, designed for surface-mount (SMD/SMT) applications. Its operating temperature range is from -55C to +150C. The component is manufactured using Silicon technology and features an enhancement channel mode.
The SN7002N is part of the Xn7002 series from Infineon Technologies. It is supplied on a reel, with a factory pack quantity of 10000 units. Its dimensions are 2.9mm in length, 1.3mm in width, and 1.1mm in height.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The continuous drain current is 200mA.
The operating temperature range is from -55C to +150C.
The SN7002N is supplied in a SOT-23-3 package.
The SN7002N is RoHS3 Compliant.