| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,379 pcs
|
2379 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon SN7002N is a P-Channel MOSFET belonging to the Xn7002 series. This component is designed for electronic circuits requiring a reliable P-Channel switching element.
Key electrical specifications include a drain-source breakdown voltage of 60V and a continuous drain current of 200mA. The on-resistance is rated at 5 Ohms, with a gate-source threshold voltage of 800mV. It operates with a gate-source voltage of up to 10V and has a gate charge of 1nC. The power dissipation is 0.36W.
This MOSFET is suitable for applications operating within a temperature range of -55C to +150C. It is manufactured using Silicon (Si) technology and features an enhancement channel mode.
The SN7002N is supplied in a compact PG-SOT-23-3 surface-mount package. It is available on a reel, with a factory pack quantity of 10000 units. The package dimensions are 2.9mm in length, 1.3mm in width, and 1.1mm in height.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The continuous drain current is 200mA.
The operating temperature range is from -55C to +150C.
The SN7002N is supplied in a PG-SOT-23-3 package.
The SN7002N is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.