JTX2N2907A
Motorola Semicondutor
The JTX2N2907A is a single bipolar junction transistor manufactured by Motorola Semiconductor. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,436 pcs
|
16436 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade |
The SN65LVDS179MDGKREP from Texas Instruments is an enhanced product designed for high-speed differential signaling applications. This LVDS transceiver offers a signaling rate of up to 400 Mbps, making it suitable for demanding data transmission tasks.
Key electrical characteristics include operation from a single 3.3-V supply, with typical driver propagation delay of 1.7 ns and receiver propagation delay of 3.7 ns. The driver exhibits a typical power dissipation of 25 mW at 200 MHz, while the receiver consumes approximately 60 mW at the same frequency. The device supports both LVDS and LVTTL input and output signals.
Designed for reliability, the SN65LVDS179MDGKREP operates within an extended temperature range of -55°C to 125°C. It meets or exceeds the requirements of the ANSI TIA/EIA-644-1995 standard and features bus-terminal ESD protection exceeding 12 kV. The component is housed in a VSSOP (DGK) package with dimensions of 3 mm x 4.9 mm.
This enhanced product is manufactured under a controlled baseline, with one assembly/test site and one fabrication site, and offers enhanced diminishing manufacturing sources (DMS) support and product-change notification.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.41 | $4.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It operates from a single 3.3V supply.
It is available in a VSSOP (DGK) 8-pin package with dimensions 3 mm x 4.9 mm (14.7 mm²).
-55 to 125 °C.
400 Mbps.
Driver: 1.7 ns typical; Receiver: 3.7 ns typical.
Driver: 25 mW typical at 200 MHz; Receiver: 60 mW typical at 200 MHz.
Exceeds 12 kV.
