| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
69,000 pcs
|
69000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
1,638 pcs
|
1638 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
215 pcs
|
215 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
This SMUN5314DW1T1G from On Semiconductor is a complementary bias resistor transistor (BRT) designed to replace a single transistor and its external bias network. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1 = 10 kΩ) and a base-emitter resistor (R2 = 47 kΩ).
The device simplifies circuit design, reduces board space, and lowers component count. It features a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The saturation voltage (Vce) is a maximum of 250mV at 300µA/10mA, and the minimum DC current gain (hFE) is 80 at 5mA/10V.
Packaged in a compact SOT-363 (SC-88) surface mount package, this transistor array is suitable for various electronic applications where space and component count reduction are critical. It operates with a maximum power dissipation of 187mW.
The SMUN5314DW1T1G is Pb-Free and Halogen Free, complying with RoHS standards. Its design makes it a versatile component for digital logic circuits and other applications requiring integrated biasing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 Vdc.
SC-88/SC70-6/SOT-363 surface mount package.
Minimum 80 at 5 mA, 10 V.
Base resistor R1 is 10 kΩ, emitter-base resistor R2 is 47 kΩ.
187 mW.
One NPN and one PNP pre-biased transistor.