SMUN5313DW1T1G The SMUN5313DW1T1G is a pre-biased bipolar transistor array from On Semiconductor containing one NPN and one PNP transistor. It is rated for a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc.
Mfr Part #:

SMUN5313DW1T1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SMUN5313DW1T1G is a pre-biased bipolar transistor array from On Semiconductor containing one NPN and one PNP transistor. It is rated for a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc.
✓ Total Stock: 583,401 pcs
$ Price Range: $0.99

SMUN5313DW1T1G Available from 6 distributors

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SMUN5313DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Power Dissipation
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMUN5313DW1T1G Description

Short technical summary and product information.

The SMUN5313DW1T1G is a pre-biased bipolar transistor array from On Semiconductor, integrating one NPN and one PNP transistor in a single surface-mount package. Each transistor features built-in bias resistors, simplifying circuit design by reducing external component count. The device is rated for a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5mA, 10V, and a maximum collector-emitter saturation voltage of 250mV at 300µA base current and 10mA collector current. The integrated input resistor is typically 47 kΩ with a resistor ratio of 1. The device can dissipate up to 187 mW of power.

 

The SMUN5313DW1T1G is housed in a SOT-363 package, also known as SC-88 or SC70-6, and is designed for surface mount assembly. It supports an operating temperature range from -55°C to +150°C, making it suitable for a wide variety of environments.

SMUN5313DW1T1G Quick Information

Product Type: Pre-Biased Bipolar Transistor Array
Canonical Name: SMUN5313DW1T1G Pre-Biased Bipolar Transistor Array
Subcategory: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

SMUN5313DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMUN5313DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMUN5313DW1T1G Features

  • Pre-biased NPN and PNP transistor array.
  • Maximum collector-emitter voltage of 50 Vdc.
  • Continuous collector current rating of 100 mAdc.
  • Built-in 47 kΩ input resistor with ratio of 1.
  • Surface mount SOT-363 package for compact designs.

SMUN5313DW1T1G Applications

  • Suitable for switching and amplifier circuits.
  • Ideal for low-current driver applications.
  • Reduces component count in bias networks.
  • Used in portable and space-constrained electronics.

SMUN5313DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SMUN5313DW1T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The maximum continuous collector current is 100 mAdc.

What is the package type for this transistor array?

The device is housed in a SOT-363 package, also known as SC-88 or SC70-6.

What is the operating temperature range?

The operating temperature range is from -55 °C to +150 °C.

What is the typical input resistor value?

The typical input resistor value is 47 kΩ.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 80 at 5mA, 10V.

What is the maximum power dissipation?

The maximum power dissipation is 187 mW.

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