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SMUN5312DW1T1G The On Semiconductor SMUN5312DW1T1G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

SMUN5312DW1T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SMUN5312DW1T1G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 145,460 pcs
$ Price Range: $0.32

SMUN5312DW1T1G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
121,020 pcs
On Request
121020 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
24,000 pcs
On Request
24000 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
440 pcs
On Request
440 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SMUN5312DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
SVHC Present
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SMUN5312DW1T1G Description

Short technical summary and product information.

This On Semiconductor SMUN5312DW1T1G is a complementary bias resistor transistor (BRT) designed to simplify circuit design by integrating NPN and PNP transistors with monolithic bias networks. Each transistor includes a series base resistor and a base-emitter resistor, with values of 22 kΩ for both R1 and R2.

 

The device supports a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It features a Vce saturation of 250mV at 300µA, 10mA and a DC current gain (hFE) of 60 at 5mA, 10V. The input forward voltage is rated at 40Vdc, and the input reverse voltage is 10Vdc.

 

Packaged in a compact SC-88/SC70-6/SOT-363 surface-mount package, this transistor array is suitable for applications where board space and component count reduction are critical. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It operates with a power dissipation of 187mW (one junction heated) or 250mW (both junctions heated) at 25°C ambient temperature.

SMUN5312DW1T1G Quick Information

Product Type: Transistor Array, Pre-Biased
Canonical Name: NPN and PNP Transistors with Monolithic Bias Resistor Network
Subcategory: Pre-Biased

SMUN5312DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SMUN5312DW1T1G Estimated Pricing

Qty Low High
1+ $0.32 $0.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMUN5312DW1T1G Features

  • NPN and PNP transistors integrated.
  • Monolithic bias resistor network included.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-363 surface-mount package.

SMUN5312DW1T1G Applications

  • Simplifies circuit design.
  • Reduces board space.
  • Reduces component count.
  • Suitable for automotive applications.

SMUN5312DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SMUN5312DW1T1G?

The maximum collector-emitter voltage is 50 Vdc.

What package does the SMUN5312DW1T1G come in?

It is available in an SC-88/SC70-6/SOT-363 surface mount package.

What is the maximum continuous collector current rating?

The maximum continuous collector current is 100 mAdc.

What are the built-in resistor values?

Both R1 and R2 are 22 kΩ resistors.

What is the minimum DC current gain?

The minimum DC current gain (hFE) is 60 at 5 mA collector current and 10 V Vce.

What is the maximum saturation voltage?

The maximum Vce saturation voltage is 250 mV at 300 µA base current and 10 mA collector current.

What is the power dissipation rating?

Power dissipation is 187 mW for one junction and 250 mW for both junctions heated at 25°C ambient.

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