| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SMUN5311DW1T3G is a pre-biased bipolar transistor array from On Semiconductor, designed to simplify circuit design by integrating a single transistor with its bias network. This device contains one NPN and one PNP transistor, each with internal resistors (R1 = 10 kΩ, R2 = 10 kΩ).
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The transistor type is NPN/PNP Pre-Biased (Dual), with a DC Current Gain (hFE) of 35 minimum at 5mA/10V and a Vce Saturation of 250mV maximum at 300µA/10mA.
This component is supplied in a SOT-363 (SC-88/SC70-6) surface mount package. The total device dissipation is rated at 187mW (one junction heated) or 250mW (both junctions heated) at 25°C ambient temperature. It is also noted as Pb-Free and Halogen Free.
The SMUN5311DW1T3G is suitable for applications where component count reduction and board space savings are critical. Its integrated bias resistors eliminate the need for external components, streamlining assembly and potentially reducing system costs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 Vdc.
100 mAdc.
Minimum 35 at 5mA collector current and 10V collector-emitter voltage.
Maximum 250mV at 300µA base current and 10mA collector current.
10 kΩ.
SOT-363 (SC-88/SC70-6).
Yes, the device is Pb-Free.