| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,610 pcs
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2610 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The SMUN5311DW1T2G from On Semiconductor is a complementary bias resistor transistor (BRT) designed to simplify circuit design by integrating an NPN and a PNP transistor with monolithic bias resistors. This device replaces a single transistor and its external bias network, reducing component count and board space.
Key electrical specifications include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It features a nominal 10kΩ resistor value and a DC current gain (hFE) of 35 at 5mA and 10V. The Vce saturation is a maximum of 250mV at 300µA and 10mA.
This transistor array is housed in a compact SOT-363 (SC-88/SC70-6) surface mount package. It is suitable for applications requiring reduced component count and simplified board layout. The device is Pb-Free and Halogen Free, complying with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device is available in an SOT-363 package, also known as SC-88/SC70-6.
The maximum collector-emitter voltage is 50 Vdc.
The maximum continuous collector current is 100 mAdc.
The built-in resistor is 10 kΩ.
The minimum hFE is 35 at 5 mA collector current and 10 V collector-emitter voltage.
The maximum Vce saturation voltage is 250 mV at 300 µA base current and 10 mA collector current.