SMUN5235DW1T1G The SMUN5235DW1T1G from ON Semiconductor is a Dual NPN Bias Resistor Transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

SMUN5235DW1T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SMUN5235DW1T1G from ON Semiconductor is a Dual NPN Bias Resistor Transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 158,133 pcs
$ Price Range: $0.99

SMUN5235DW1T1G Available from 3 distributors

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96,758 pcs
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355 pcs
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SMUN5235DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMUN5235DW1T1G Description

Short technical summary and product information.

The SMUN5235DW1T1G is a Dual NPN Bias Resistor Transistor (BRT) manufactured by ON Semiconductor. This integrated device simplifies circuit design by combining a single transistor with a monolithic bias network, eliminating the need for external resistors. It offers a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA.

 

The transistor features two NPN transistors with integrated bias resistors, including a series base resistor and a base-emitter resistor. The internal resistors are specified as R1 = 2.2 kΩ and R2 = 47 kΩ. The device has a maximum input forward voltage of 12Vdc and a maximum input reverse voltage of 5Vdc.

 

This component is supplied in a SOT-363 package, also known as SC-88 or SC70-6, and is designed for surface mount applications. The power dissipation is rated at 187mW at 25°C ambient temperature for a single junction heated, and 250mW for both junctions heated. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5mA/10V and a saturation voltage (Vce(sat)) of 250mV at 1mA/10mA. The SMUN5235DW1T1G is suitable for applications requiring reduced component count and board space.

SMUN5235DW1T1G Quick Information

Product Type: Dual NPN Bias Resistor Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: BJT Arrays, Pre-Biased

SMUN5235DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

SMUN5235DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMUN5235DW1T1G Features

  • Dual NPN pre-biased transistor.
  • Integrated bias resistor network.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • SOT-363 surface mount package.

SMUN5235DW1T1G Applications

  • Simplifies circuit designs.
  • Reduces component count.
  • Saves valuable board space.
  • Suitable for digital logic applications.

SMUN5235DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO)?

50 Vdc.

What package is the SMUN5235DW1T1G available in?

SOT-363 (also known as SC-88/SC70-6), surface mount.

What is the minimum DC current gain (hFE)?

Minimum 80 at 5 mA collector current and 10 V collector-emitter voltage.

What is the collector-emitter saturation voltage?

Maximum 250 mV at 1 mA base current and 10 mA collector current.

What are the input forward and reverse voltage limits?

Maximum input forward voltage is 12 Vdc, maximum input reverse voltage is 5 Vdc.

What is the power dissipation rating?

Total device dissipation: 187 mW (Note 1) and 256 mW (Note 2) for individual transistors; 250 mW (Note 1) and 385 mW (Note 2) when both junctions are heated at 25°C ambient.

What are the built-in resistor values?

R1 = 2.2 kΩ, R2 = 47 kΩ.

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