SMUN5233DW1T1G The SMUN5233DW1T1G from On Semiconductor is a Dual NPN Bias Resistor Transistor designed to simplify circuit design and reduce board space. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

SMUN5233DW1T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SMUN5233DW1T1G from On Semiconductor is a Dual NPN Bias Resistor Transistor designed to simplify circuit design and reduce board space. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 3,973 pcs
$ Price Range: $0.24

SMUN5233DW1T1G Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,810 pcs
2810 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
923 pcs
923 pcs On Request 1 On Request On Request 15+ On Request On Request
Non-Authorised Inventory information
240 pcs
$0.24 ℹ
Qty Price
0+ 0.24
240 pcs $0.24
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0+ 0.24
1 On Request On Request On Request On Request On Request

SMUN5233DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMUN5233DW1T1G Description

Short technical summary and product information.

The SMUN5233DW1T1G is a Dual NPN Bias Resistor Transistor (BRT) from On Semiconductor, integrating a single transistor with a monolithic bias network. This design eliminates the need for external resistors, simplifying circuit design and reducing component count and board space.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The device features integrated resistors with nominal values of R1 = 4.7 kΩ and R2 = 47 kΩ. It offers a minimum DC current gain (hFE) of 80 at 5mA/10V and a maximum Vce saturation of 250mV at 1mA/10mA.

 

This transistor is supplied in a SOT-363 (SC-88/SC70-6) surface mount package, suitable for compact electronic designs. The device is Pb-Free and Halogen Free, with a RoHS3 compliance status. It is also rated for Moisture Sensitivity Level 1 (MSL 1).

 

The SMUN5233DW1T1G is ideal for applications where circuit simplification and space reduction are critical. Its pre-biased configuration makes it easy to use in various digital logic and switching applications.

SMUN5233DW1T1G Quick Information

Product Type: Dual NPN Bias Resistor Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Bipolar (BJT) - Arrays, Pre-Biased

SMUN5233DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMUN5233DW1T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMUN5233DW1T1G Features

  • Dual NPN pre-biased transistor.
  • Integrated bias resistors simplify design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • SOT-363 surface mount package.

SMUN5233DW1T1G Applications

  • Ideal for circuit simplification.
  • Reduces component count and board space.
  • Suitable for digital logic applications.
  • Used in space-constrained designs.

SMUN5233DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SMUN5233DW1T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the package type of the SMUN5233DW1T1G?

The SMUN5233DW1T1G is available in an SOT-363 surface-mount package (also designated SC-88/SC70-6).

What is the maximum continuous collector current?

The maximum continuous collector current is 100 mAdc.

What are the built-in resistor values?

The series base resistor R1 is 4.7 kΩ and the base-emitter resistor R2 is 47 kΩ.

What is the minimum DC current gain (hFE)?

The minimum DC current gain is 80 at 5 mA collector current and 10 V collector-emitter voltage.

What is the maximum power dissipation of the device?

The maximum power dissipation is 187 mW at 25°C ambient temperature.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 250 mV at 1 mA base current and 10 mA collector current.

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