| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1252+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SMUN5232DW1T1G is a dual NPN pre-biased bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed to simplify circuit design by integrating two NPN transistors with internal bias resistors. It offers a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA.
The transistor features a minimum DC current gain (hFE) of 15 at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 1mA base current and 10mA collector current. The power dissipation is rated at 187mW.
This component is supplied in a surface-mount SC-70-3 (SOT-363) package, making it suitable for space-constrained applications. The integrated bias resistors, with R1 at 10 kΩ and R2 at 47 kΩ, simplify external circuitry and reduce component count. The device is Pb-Free and Halogen Free, complying with RoHS standards.
Applications for the SMUN5232DW1T1G include general-purpose switching, signal amplification, and driver circuits where reduced board space and component count are beneficial. Its pre-biased structure aids in stable biasing and simplifies input requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
The continuous collector current is 100mA.
The power dissipation is 187mW.
The SMUN5232DW1T1G is supplied in a SOT-363 package.
Yes, the SMUN5232DW1T1G is RoHS3 Compliant.