SMUN5231DW1T1G

The SMUN5231DW1T1G is a dual NPN pre-biased (bias resistor built-in) transistor array manufactured by On Semiconductor. It is designed for general-purpose switching and amplification in low-power circuits. The device integrates two NPN transistors with internal bias resistors, reducing external component count.

Key electrical characteristics include a maximum collector-base voltage of 50 Vdc, maximum collector-emitter voltage of 50 Vdc, and a continuous collector current rating of 100 mAdc. The DC current gain (hFE) is a minimum of 8 at 5mA collector current and 10V collector-emitter voltage. Maximum collector-emitter saturation voltage is 250mV at 5mA base current and 10mA collector current.

The total device power dissipation is 250 mW when both junctions are heated (at 25°C ambient), or 187 mW when only one junction is heated. Thermal resistance from junction to ambient ranges from 350 °C/W to 670 °C/W depending on heating conditions. The device is housed in a compact SC88 surface-mount package, suitable for automated assembly.

This part is widely used in applications requiring integrated transistor arrays with reduced board space, such as driver stages, logic level shifting, and signal amplification in consumer electronics and industrial controls.