SMUN5230DW1T1G The SMUN5230DW1T1G is a dual NPN pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

SMUN5230DW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SMUN5230DW1T1G is a dual NPN pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 21,000 pcs
$ Price Range: $0.99

SMUN5230DW1T1G Available from 1 distributor

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SMUN5230DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Style
Mounting Type
Power
Resistor
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMUN5230DW1T1G Description

Short technical summary and product information.

The SMUN5230DW1T1G is a dual NPN bias resistor transistor (BRT) from ON Semiconductor, designed to replace a single transistor and its external bias network. This integration simplifies circuit design, reduces board space, and lowers component count.

 

Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device has a nominal power dissipation of 187mW at 25°C. It incorporates monolithic bias resistors with R1 and R2 values of 1kΩ each.

 

The transistor offers a minimum DC current gain (hFE) of 3 at 5mA and 10V, with a Vce saturation of 250mV maximum at 5mA collector current and 10mA base current. The maximum collector cutoff current is 500nA.

 

This component is housed in a surface-mount SOT-363 package (also referred to as SC-88/SC70-6). It is Pb-free and halogen-free, compliant with RoHS standards.

SMUN5230DW1T1G Quick Information

Product Type: Dual NPN Bias Resistor Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Bipolar (BJT) - Arrays, Pre-Biased

SMUN5230DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMUN5230DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMUN5230DW1T1G Features

  • Dual NPN pre-biased transistor.
  • 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • Integrated 1kΩ bias resistors.
  • SOT-363 surface-mount package.

SMUN5230DW1T1G Applications

  • Used in low-power switching applications.
  • Ideal for driver circuits with limited space.
  • Suitable for logic-level interfacing.
  • Applied in signal amplification stages.
  • Common in portable electronic devices.

SMUN5230DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SMUN5230DW1T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The maximum continuous collector current is 100 mAdc.

What is the power dissipation capability?

The maximum power dissipation is 187 mW at 25°C ambient temperature.

What package type is the SMUN5230DW1T1G available in?

The device is supplied in a 6-TSSOP, SC-88, SOT-363 surface mount package.

What are the built-in resistor values?

The base resistor (R1) is 1 kΩ and the emitter-base resistor (R2) is also 1 kΩ.

What is the minimum DC current gain?

The minimum DC current gain (hFE) is 3 at 5 mA collector current and 10 V collector-emitter voltage.

What is the maximum collector-emitter saturation voltage?

The maximum Vce saturation is 250 mV at 5 mA base current and 10 mA collector current.

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