| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18,000 pcs
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18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SMUN5215T1G is a digital transistor from ON Semiconductor, designed as a Bias Resistor Transistor (BRT). This integrated device replaces a single transistor and its external bias resistor network, simplifying circuit design and reducing board space. It features an NPN pre-biased configuration with a collector-emitter voltage rating of 50V and a continuous collector current of 100mA.
The transistor includes an internal bias resistor network, typically consisting of a series base resistor and a base-emitter resistor, with R1 specified at 10 kΩ. It offers a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. The Vce saturation is a maximum of 250mV at 1mA base current and 10mA collector current. The device has a power dissipation rating of 200 mW.
Packaged in an SC-70, SOT-323 (SC-70-3) surface-mount case, the SMUN5215T1G is suitable for applications where space is a constraint. Its integrated design simplifies component count and system cost. The device is specified for RoHS3 compliance and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
100mA.
SC-70 (SOT-323).
Minimum 160 at Vce=10V, Ic=5mA.
Maximum 250mV at Ib=1mA, Ic=10mA.
200mW maximum.
10kΩ (R1).