SMUN5211T1G The On Semiconductor SMUN5211T1G is an NPN pre-biased transistor designed for simplified circuit design and reduced board space. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

SMUN5211T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SMUN5211T1G is an NPN pre-biased transistor designed for simplified circuit design and reduced board space. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 16,600 pcs
$ Price Range: $0.99

SMUN5211T1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
15,000 pcs
15000 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
1,600 pcs
1600 pcs On Request 1 On Request On Request On Request On Request On Request

SMUN5211T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
SVHC Present
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMUN5211T1G Description

Short technical summary and product information.

The SMUN5211T1G from On Semiconductor is a digital transistor featuring a monolithic bias resistor network, designed to replace individual resistors and transistors. This integration simplifies circuit design, reduces component count, and saves board space.

 

Key electrical specifications include a collector-emitter voltage (Vceo) of 50V and a continuous collector current (Ic) of 100mA. It has a DC current gain (hFE) of 35 minimum at 5mA/10V and a Vce saturation of 250mV maximum at 300µA/10mA. The device incorporates two integrated resistors: R1 (base) and R2 (base-emitter), both nominally 10 kΩ.

 

Packaged in a surface-mount SC-70, SOT-323 (SC-70-3) package, the SMUN5211T1G has a maximum power dissipation of 202 mW. It is suitable for applications requiring simplified digital logic interfaces.

 

This series is Pb-free and halogen-free, complying with RoHS standards. The S and NSV prefixes indicate automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

SMUN5211T1G Quick Information

Product Type: NPN Pre-Biased Transistor
Series: Automotive, AEC-Q101
Canonical Name: On Semiconductor SMUN5211T1G NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

SMUN5211T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMUN5211T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMUN5211T1G Features

  • NPN pre-biased transistor simplifies design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 10 kΩ base resistors.
  • Surface mount SC-70-3 package.

SMUN5211T1G Applications

  • Ideal for digital logic interfaces.
  • Reduces component count on PCBs.
  • Saves board space in designs.
  • Suitable for automotive applications.

SMUN5211T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the SMUN5211T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the maximum continuous collector current?

The maximum continuous collector current is 100 mAdc.

What package does the SMUN5211T1G come in?

It is available in an SC-70 (SOT-323) surface mount package.

What is the minimum DC current gain (hFE) of this transistor?

The minimum DC current gain is 35 at Ic=5mA, Vce=10V.

What is the collector-emitter saturation voltage?

The maximum saturation voltage is 250mV at Ib=300µA, Ic=10mA.

What are the values of the integrated bias resistors?

Both the base resistor (R1) and emitter-base resistor (R2) are 10 kΩ.

What is the maximum power dissipation of the SMUN5211T1G?

The maximum power dissipation is 202 mW.

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