| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21,000 pcs
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21000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The SMUN5131DW1T1G from ON Semiconductor is a Dual PNP Bias Resistor Transistor (BRT) designed to integrate a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces component count, and saves board space.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The device also has an input forward voltage (VIN(fwd)) of 12 Vdc and an input reverse voltage (VIN(rev)) of 10 Vdc. The bias resistors have a nominal value of 2.2 kΩ.
This transistor array is supplied in a SOT-363 package, which is a surface mount type. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is suitable for applications requiring simplified circuitry and reduced component footprints.
The SMUN5131DW1T1G is AEC-Q101 Qualified and PPAP Capable when ordered with the S or NSV prefix, indicating suitability for automotive and other demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the SMUN5131DW1T1G is 50 Vdc.
The continuous collector current (IC) rating for this device is 100 mAdc.
The SMUN5131DW1T1G is supplied in a SOT-363 package, which is a surface mount type.
The device features internal bias resistors with a nominal value of 2.2 kΩ.
Yes, the SMUN5131DW1T1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.