SMUN5115T1G The SMUN5115T1G is a PNP Pre-Biased Transistor from onsemi. It features a 50V collector-emitter voltage and 100mA continuous collector current, housed in an SC-70/SOT-323 package.
Mfr Part #:

SMUN5115T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SMUN5115T1G is a PNP Pre-Biased Transistor from onsemi. It features a 50V collector-emitter voltage and 100mA continuous collector current, housed in an SC-70/SOT-323 package.
Total Stock: 93,000 pcs
$ Price Range: $0.99

SMUN5115T1G Available from 1 distributor

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SMUN5115T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Resistor (R1)
Collector Current
Collector Current Cutoff
Collector-Base Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Input Forward Voltage
Input Reverse Voltage
Mounting Type
Pb-Free
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMUN5115T1G Description

Short technical summary and product information.

The onsemi SMUN5115T1G is a PNP type, pre-biased bipolar junction transistor (BJT) designed for simplified circuit design and reduced component count. It integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50Vdc and a continuous collector current (IC) of 100mAdc. The device has a nominal base resistor (R1) of 10 kΩ. It offers a minimum DC current gain (hFE) of 160 at 5mA and 10V, with a maximum Vce saturation of 250mV at 300μA and 10mA. The maximum collector current cutoff (IC(off)) is 500nA.

 

This transistor is supplied in a surface mountable SC-70, SOT-323 package, specifically the SC-70-3 (SOT323) supplier device package. The maximum power dissipation is 202 mW. The device is Pb-Free and Halogen Free/BFR Free, and RoHS compliant.

 

The SMUN5115T1G is suitable for applications where a single transistor and its external bias network can be replaced by a single component, leading to reduced system cost and board space.

SMUN5115T1G Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: SMUN5115T1G PNP Pre-Biased Transistor with Integrated Resistor Network
Subcategory: Pre-Biased

SMUN5115T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMUN5115T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMUN5115T1G Features

  • PNP pre-biased transistor with integrated resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • 10 kΩ integrated base resistor.
  • SC-70/SOT-323 surface mount package.

SMUN5115T1G Applications

  • Simplifies circuit design and reduces component count.
  • Reduces overall system cost and board space.
  • Ideal for applications requiring integrated bias networks.
  • Suitable for general-purpose switching circuits.

SMUN5115T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SMUN5115T1G?

The maximum collector-emitter voltage (VCEO) for the SMUN5115T1G is 50 Vdc.

What is the continuous collector current of the SMUN5115T1G?

The continuous collector current (IC) for the SMUN5115T1G is 100 mAdc.

What is the package type for the SMUN5115T1G transistor?

The SMUN5115T1G is available in an SC-70, SOT-323 package.

What is the integrated base resistor value in the SMUN5115T1G?

The SMUN5115T1G has an integrated base resistor (R1) of 10 kΩ.

What is the minimum DC current gain (hFE) for the SMUN5115T1G?

The minimum DC current gain (hFE) for the SMUN5115T1G is 160 at 5mA collector current and 10V collector-emitter voltage.

Is the SMUN5115T1G RoHS compliant?

Yes, the SMUN5115T1G is RoHS3 Compliant.

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