| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,000 pcs
|
21000 pcs | On Request | 1 | On Request | On Request | 1707+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Style | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SMUN5114T1G is a PNP Pre-Biased Transistor manufactured by On Semiconductor. This device is designed to simplify circuit design and reduce board space by integrating a single transistor with a monolithic bias network. It offers a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc.
The transistor has a DC current gain (hFE) of at least 80 at 5mA and 10V. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA and 10mA. The internal bias resistors include a base-emitter resistor (R2) of 47 kΩ.
This component is supplied in a compact SC-70-3 (SOT-323) surface mount package, making it suitable for applications where space is limited. The maximum power dissipation is 200 mW.
The SMUN5114T1G is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the SMUN5114T1G is 50 Vdc.
The continuous collector current (IC) rating for the SMUN5114T1G is 100 mAdc.
The SMUN5114T1G is supplied in a SC-70-3 (SOT-323) package.
The maximum power dissipation for the SMUN5114T1G is 200 mW.
The base-emitter resistor (R2) in the SMUN5114T1G is 47 kΩ.
The minimum DC current gain (hFE) for the SMUN5114T1G is 80 at 5mA and 10V.
The Vce Saturation voltage for the SMUN5114T1G is a maximum of 250mV at 300µA and 10mA.