| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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204,000 pcs
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204000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SMUN5114DW1T1G is a dual PNP pre-biased transistor designed for simplified circuit design and reduced component count. It integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor.
This device features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The DC current gain (hFE) is a minimum of 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce) is a maximum of 250mV at 300µA base current and 10mA collector current. The power dissipation is rated at 187mW.
The transistor is supplied in a SOT-363 surface mount package, also known as SC-88 or SC70-6. This compact package is suitable for applications where board space is limited. The pre-biased nature of the transistor simplifies external circuitry, making it ideal for various digital applications.
Compliance includes RoHS3 status, REACH unaffected, and Moisture Sensitivity Level 1. These characteristics make it suitable for a wide range of electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The SMUN5114DW1T1G is available in a SOT-363 surface mount package (also known as SC-88 or SC70-6).
The maximum continuous collector current is 100 mAdc.
The minimum DC current gain is 80 at 5mA collector current and 10V Vce.
The maximum saturation voltage is 250mV at 300µA base current and 10mA collector current.
The maximum power dissipation is 187mW.
Yes, each PNP transistor has a 47kΩ base resistor integrated.