| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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78,000 pcs
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78000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The SMUN5113DW1T1G from On Semiconductor is a dual PNP bias resistor transistor (BRT) designed to simplify circuit design by integrating a transistor with a monolithic bias resistor network. This device replaces individual components, reducing system cost and board space.
Key electrical specifications include a collector-emitter voltage of 50V and a continuous collector current of 100mA. It features integrated resistors with nominal values of 47kΩ for both R1 (base) and R2 (base-emitter).
The transistor array has a maximum power dissipation of 187mW at 25°C. It is supplied in a surface mountable SOT-363 package, also known as SC-88/SC70-6.
This series is Pb-free and halogen-free, complying with RoHS standards. The device is suitable for applications requiring reduced component count and simplified board layouts.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 50 Vdc.
The maximum continuous collector current is 100 mAdc.
The total device dissipation is 187 mW at 25°C when one junction is heated.
The device has integrated resistors R1 and R2, each with a nominal value of 47 kOhms.
The transistor array is available in a SOT-363 package.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.