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SMUN5112DW1T1G The On Semiconductor SMUN5112DW1T1G is a dual PNP pre-biased transistor array. It features a 50V collector-emitter voltage and a 100mA continuous collector current, housed in a SOT-363 package.
Mfr Part #:

SMUN5112DW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SMUN5112DW1T1G is a dual PNP pre-biased transistor array. It features a 50V collector-emitter voltage and a 100mA continuous collector current, housed in a SOT-363 package.
✓ Total Stock: 192,000 pcs
$ Price Range: $0.99

SMUN5112DW1T1G Available from 1 distributor

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✓ Non-Authorised
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192,000 pcs
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SMUN5112DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SMUN5112DW1T1G Description

Short technical summary and product information.

The SMUN5112DW1T1G from On Semiconductor is a dual PNP pre-biased transistor array designed to simplify circuit design and reduce board space. This device integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, eliminating the need for external components.

 

Key electrical specifications include a collector-emitter voltage of 50V and a continuous collector current of 100mA. The device offers a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V Vce. Saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The integrated resistors have a nominal value of 22kΩ.

 

This transistor array is supplied in a compact SOT-363 surface mount package, making it suitable for applications where space is limited. The device is also Pb-free and Halogen-free, aligning with environmental compliance standards.

SMUN5112DW1T1G Quick Information

Product Type: Transistor Array
Series: MUN5112DW1
Canonical Name: Dual PNP Pre-Biased Transistor Array
Subcategory: Pre-Biased

SMUN5112DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMUN5112DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMUN5112DW1T1G Features

  • Dual PNP pre-biased transistor array.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 22kΩ bias resistors.
  • Compact SOT-363 surface mount package.

SMUN5112DW1T1G Applications

  • Simplifies circuit design.
  • Reduces component count.
  • Ideal for space-constrained applications.
  • Used in digital logic circuits.

SMUN5112DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SMUN5112DW1T1G?

50Vdc.

What is the continuous collector current rating?

100mAdc.

What is the power dissipation of this device?

250mW at 25°C ambient temperature.

What package is the SMUN5112DW1T1G available in?

SOT-363 surface mount package (also SC-88/SC70-6).

Does the SMUN5112DW1T1G have a built-in base-emitter resistor?

Yes, each transistor includes a 22kΩ base-emitter resistor.

What is the minimum DC current gain (hFE)?

Minimum hFE of 60 at Ic=5mA and Vce=10V.

What is the maximum collector-emitter saturation voltage?

250mV at Ib=300µA and Ic=10mA.

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