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SMUN5111T1G The On Semiconductor SMUN5111T1G is a PNP pre-biased transistor designed for surface mount applications. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

SMUN5111T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SMUN5111T1G is a PNP pre-biased transistor designed for surface mount applications. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 112,350 pcs
$ Price Range: $0.99

SMUN5111T1G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
84,000 pcs
On Request
84000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
28,020 pcs
On Request
28020 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
330 pcs
On Request
330 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SMUN5111T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SMUN5111T1G Description

Short technical summary and product information.

The SMUN5111T1G from On Semiconductor is a PNP pre-biased transistor integrated with a monolithic bias resistor network. This design simplifies circuit construction, reduces board space, and lowers component count.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The device also has a maximum input forward voltage (VIN(fwd)) of 40 Vdc and a maximum input reverse voltage (VIN(rev)) of 10 Vdc. It offers a DC current gain (hFE) of 35 minimum at 5mA collector current and 10V collector-emitter voltage, with a Vce saturation of 250mV maximum at 300µA base current and 10mA collector current. A nominal base resistor (R1) of 10 kΩ is integrated.

 

This transistor is housed in a compact SC-70-3 (SOT-323) package, suitable for surface mount assembly. The power dissipation is rated at 20 mW.

 

The SMUN5111T1G is designed to replace single transistors and their external bias resistor networks, offering a cost-effective and space-saving solution for various electronic circuits.

SMUN5111T1G Quick Information

Product Type: PNP Pre-Biased Transistor
Canonical Name: On Semiconductor SMUN5111T1G PNP Pre-Biased Transistor
Subcategory: Pre-Biased Bipolar Junction Transistor (BJT)

SMUN5111T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMUN5111T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMUN5111T1G Features

  • PNP pre-biased transistor with integrated resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SC-70-3 (SOT-323) surface mount package.
  • Simplifies circuit design and reduces component count.

SMUN5111T1G Applications

  • Ideal for space-constrained designs.
  • Replaces discrete transistor and resistor networks.
  • Used in general-purpose switching circuits.
  • Suitable for bias stabilization applications.

SMUN5111T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

50 Vdc.

What is the maximum collector current?

100 mAdc continuous.

What is the DC current gain (hFE)?

Minimum 35 at IC=5mA, VCE=10V.

What is the collector-emitter saturation voltage?

Maximum 250mV at IB=300µA, IC=10mA.

What is the built-in resistor value?

10 kΩ.

What is the package type?

SC-70, SOT-323 (SC-70-3).

What is the maximum power dissipation?

20 mW.

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