SMUN5111DW1T1G The ON Semiconductor SMUN5111DW1T1G is a dual PNP bias resistor transistor designed for simplified circuit design and reduced board space. It offers a collector-emitter voltage of 50V and a continuous collector current of 100mA.
Mfr Part #:

SMUN5111DW1T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SMUN5111DW1T1G is a dual PNP bias resistor transistor designed for simplified circuit design and reduced board space. It offers a collector-emitter voltage of 50V and a continuous collector current of 100mA.
✓ Total Stock: 202,738 pcs
$ Price Range: $0.99

SMUN5111DW1T1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
201,000 pcs
201000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,738 pcs
1738 pcs On Request 1 On Request On Request On Request On Request On Request

SMUN5111DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMUN5111DW1T1G Description

Short technical summary and product information.

The ON Semiconductor SMUN5111DW1T1G is a dual PNP bias resistor transistor (BRT) that integrates a single transistor with a monolithic bias network, eliminating the need for external resistors. This design simplifies circuit construction, reduces component count, and saves board space.

 

Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The device also features a maximum input forward voltage of 40 Vdc and a maximum input reverse voltage of 10 Vdc. The DC current gain (hFE) is a minimum of 35 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300nA and 10mA.

 

This transistor operates within a temperature range of -55°C to 150°C (TJ). It is housed in a compact SC-88/SC70-6 (SOT-363) surface mount package. The total device dissipation is rated at 385mW when both junctions are heated at 25°C.

 

The SMUN5111DW1T1G is Pb-free and Halogen-free, compliant with RoHS standards. It is supplied in a tape and reel package with a standard quantity of 3000 units.

SMUN5111DW1T1G Quick Information

Product Type: Transistor - Bipolar (BJT) - Arrays
Series: MUN5111DW1
Canonical Name: Dual PNP Bias Resistor Transistor
Subcategory: Bipolar Transistors - Pre-Biased

SMUN5111DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMUN5111DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMUN5111DW1T1G Features

  • Dual PNP bias resistor transistor design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SC-88/SC70-6 surface mount package.
  • Wide operating temperature range.

SMUN5111DW1T1G Applications

  • General purpose switching and amplification.
  • Signal processing in portable electronics.
  • Driver stages in low-power circuits.
  • Matched transistor pair applications.

SMUN5111DW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SMUN5111DW1T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SMUN5111DW1T1G supplied in?

It is supplied in a SC-88/SC70-6/SOT-363 package.

What is the standard package quantity?

The standard package quantity is 3000 units on tape and reel.

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