| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SMUN2214T1G is an NPN Pre-Biased Transistor (BRT) from ON Semiconductor, designed to integrate a single transistor with a monolithic bias network, reducing system cost and board space. This device offers a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA.
Key electrical characteristics include a maximum power dissipation of 230mW and a nominal base resistor R2 value of 47 kΩ. The transistor type is NPN - Pre-Biased, with a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V VCE. The Vce saturation voltage is a maximum of 250mV at 300µA base current and 10mA collector current.
This component is supplied in a surface mount SC-59 package, with a standard package quantity of 3000 units per reel. It is Pb-free and Halogen-free, compliant with RoHS3 standards. The integrated resistor network simplifies circuit design by eliminating external components, making it suitable for various digital applications where space and component count reduction are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 Vdc.
100 mAdc.
R1 = 10 kΩ, R2 = 47 kΩ.
80 at IC = 5 mA, VCE = 10 V.
SC-59 surface mount package.
230 mW.
250 mV maximum at IB = 300 µA, IC = 10 mA.