| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The SMP60N06-18 is an N-Channel Enhancement Mode MOSFET manufactured by Silicon. This transistor is designed for various electronic applications requiring efficient power switching.
Key electrical specifications include a minimum drain-source resistance of 18mΩ and a breakdown voltage of 60V. It can handle a maximum power dissipation of 125W, making it suitable for moderate to high power applications. The operating temperature range extends up to 175°C, ensuring reliability in demanding environments.
This MOSFET is packaged with 3 terminals. Its RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under recommended storage conditions.
The SMP60N06-18 is a versatile component for power management circuits, switching applications, and general-purpose amplification where an N-Channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the SMP60N06-18 is 60V.
The minimum drain-source resistance for the SMP60N06-18 is 18mΩ.
The maximum power dissipation for the SMP60N06-18 is 125W.
The maximum operating temperature for the SMP60N06-18 is 175°C.
The RoHS status of the SMP60N06-18 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SMP60N06-18 is 1 Unlimited.