| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Siliconix SMP60N03-10L is a logic-level N-channel MOSFET with a 30V drain-source breakdown voltage (VDS). It offers a low on-state resistance, with a typical value of 0.01 Ohms at 10V gate-source voltage and 30A drain current. The continuous drain current is rated at 60A at 25°C case temperature, and 51A at 100°C case temperature.
This MOSFET is suitable for applications requiring efficient power switching. Key electrical characteristics include a gate threshold voltage between 0.8V and 3.0V, and dynamic parameters such as input capacitance of 2600pF and output capacitance of 1500pF.
The device comes in a TO-220AB package, designed for through-hole mounting. It operates within a junction and storage temperature range of -55°C to 150°C. The power dissipation is rated at 105W at 25°C case temperature and 42W at 100°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The continuous drain current is 60A at 25°C.
The typical on-state resistance is 0.01 Ohms at VGS = 10V and ID = 30A.
The SMP60N03-10L is available in a TO-220AB package.
The operating junction and storage temperature range is -55°C to 150°C.