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SMMUN2233LT1G Pre-biased NPN bipolar transistor with built-in base resistor (47kΩ). Designed for switching applications with 50V Vce max, 100mA Ic continuous, and 246mW power dissipation in a surface-mount SOT-23 package.
Mfr Part #:

SMMUN2233LT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
Pre-biased NPN bipolar transistor with built-in base resistor (47kΩ). Designed for switching applications with 50V Vce max, 100mA Ic continuous, and 246mW power dissipation in a surface-mount SOT-23 package.
✓ Total Stock: 315,805 pcs
$ Price Range: $0.99

SMMUN2233LT1G Available from 3 distributors

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310,095 pcs
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2,855 pcs
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SMMUN2233LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SMMUN2233LT1G Description

Short technical summary and product information.

The SMMUN2233LT1G is a pre-biased NPN bipolar junction transistor from On Semiconductor. It integrates a base resistor (47kΩ) to simplify circuit design by reducing external component count. Key electrical characteristics include a maximum collector-emitter voltage of 50 Vdc, continuous collector current of 100 mA, and power dissipation of 246 mW. The DC current gain (hFE) is minimum 80 at 5mA, 10V, and the saturation voltage (Vce sat) is maximum 250mV at 1mA base current, 10mA collector current.

 

This transistor is designed for general-purpose switching and amplifier applications where space and component count are critical. The internal base resistor eliminates the need for an external resistor in the base path, making it ideal for digital logic interfaces and small-signal switching.

 

The device is housed in a surface-mount SOT-23 package (also known as TO-236-3 or SC-59), which is suitable for automated assembly and compact PCB layouts. It supports a mounting type of surface mount and comes in a SOT-23-3 supplier package.

SMMUN2233LT1G Quick Information

Product Type: Pre-Biased NPN Transistor
Series: SMMUN2233LT1G
Canonical Name: SMMUN2233LT1G - Pre-Biased NPN Bipolar Transistor
Subcategory: Single Pre-Biased

SMMUN2233LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMMUN2233LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMUN2233LT1G Features

  • NPN digital transistor with integrated bias resistors
  • Rated for 50 Vdc collector-emitter voltage
  • Supports 100 mA continuous collector current
  • Maximum power dissipation of 246 mW
  • RoHS compliant and halogen free

SMMUN2233LT1G Applications

  • Ideal for low-current switching circuits.
  • Used in digital logic interface applications.
  • Suitable for space-constrained PCB designs.
  • Applicable for signal amplification stages.

SMMUN2233LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SMMUN2233LT1G?

50 Vdc.

What package type is the SMMUN2233LT1G available in?

Surface-mount SOT-23 (also known as TO-236-3 or SC-59).

What is the value of the internal base resistor?

47 kΩ.

What is the minimum DC current gain (hFE)?

Minimum 80 at 5mA collector current and 10V collector-emitter voltage.

What is the maximum collector-emitter saturation voltage?

250 mV at 1mA base current and 10mA collector current.

What is the maximum power dissipation?

246 mW.

What are the input voltage ratings for the internal diode?

Maximum forward voltage 30 Vdc, maximum reverse voltage 5 Vdc.

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