| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,850 pcs
|
23850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SMMUN2216LT1G is a pre-biased NPN bipolar transistor from ON Semiconductor, designed for low-power switching and amplification applications. It integrates bias resistors to simplify circuit design and reduce external component count.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc, continuous collector current (IC) of 100 mAdc, and a minimum DC current gain (hFE) of 160 at 5mA/10V. The collector-emitter saturation voltage (VCE(sat)) is 250mV max at 1mA/10mA, and power dissipation is rated at 246 mW at 25°C ambient temperature.
The device is housed in a compact SOT23-3 surface-mount package, suitable for automated assembly and space-constrained PCB layouts. It is ideal for general-purpose switching and signal amplification in battery-operated and low-voltage circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 Vdc
100 mAdc
160 at 5mA, 10V
250mV at 1mA, 10mA
246 mW at 25°C
30 Vdc
6 Vdc