| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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131,949 pcs
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131949 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The SMMUN2215LT1G from On Semiconductor is a digital transistor featuring a monolithic bias resistor network. This integrated design replaces discrete components, simplifying circuit design and reducing board space. It is an NPN type transistor with a pre-bias configuration, suitable for applications requiring a single device with built-in resistors.
Key electrical characteristics include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. The device has a power dissipation of 246mW and a minimum DC current gain (hFE) of 160 at 5mA and 10V. It also features a base resistor of 10 kΩ and a Vce saturation of 250mV maximum at 1mA and 10mA.
This transistor is available in a surface mount package, specifically the SOT-23-3 (TO-236) and other variants like SC-59 and SC-70/SOT-323. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it suitable for various modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The power dissipation is 246 mW.
The minimum DC current gain is 160.
The maximum Vce saturation voltage is 250mV at 1mA and 10mA.
The integrated base resistor has a value of 10 kΩ.
It is an NPN - Pre-Biased transistor.