| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
45,000 pcs
|
45000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,477 pcs
|
1477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
685 pcs
|
685 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SMMUN2211LT1G is a single, pre-biased NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device integrates a transistor with a monolithic bias resistor network, simplifying circuit design and reducing component count and board space. It features a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA.
The transistor is housed in a surface-mount SOT-23-3 package. Key electrical characteristics include a typical DC current gain (hFE) of 35 at 5mA collector current and 10V Vce, and a maximum Vce saturation of 250mV at 300µA base current and 10mA collector current. The internal bias network includes resistors with nominal values of 10 kΩ for both the series base resistor (R1) and the base-emitter resistor (R2).
This series of digital transistors is designed to replace individual transistors and their external bias resistors. The device is Pb-free and halogen-free, complying with RoHS standards. Its integrated design makes it suitable for applications where space and component count reduction are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the SMMUN2211LT1G is 50 Vdc.
The continuous collector current (IC) for the SMMUN2211LT1G is 100 mAdc.
The SMMUN2211LT1G is available in a SOT-23-3 package.
The power dissipation rating for the SMMUN2211LT1G is 246 mW.
The DC current gain (hFE) is a minimum of 35 at 5mA collector current and 10V Vce.
The Vce saturation voltage is a maximum of 250mV at 300µA base current and 10mA collector current.
The internal bias network includes a series base resistor (R1) and a base-emitter resistor (R2), both with nominal values of 10 kΩ.