SMMUN2211LT1G The SMMUN2211LT1G is an NPN pre-biased transistor from ON Semiconductor in a SOT-23-3 package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
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SMMUN2211LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SMMUN2211LT1G is an NPN pre-biased transistor from ON Semiconductor in a SOT-23-3 package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 247,162 pcs
$ Price Range: $0.04

SMMUN2211LT1G Available from 4 distributors

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SMMUN2211LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMMUN2211LT1G Description

Short technical summary and product information.

The SMMUN2211LT1G is a single, pre-biased NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device integrates a transistor with a monolithic bias resistor network, simplifying circuit design and reducing component count and board space. It features a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA.

 

The transistor is housed in a surface-mount SOT-23-3 package. Key electrical characteristics include a typical DC current gain (hFE) of 35 at 5mA collector current and 10V Vce, and a maximum Vce saturation of 250mV at 300µA base current and 10mA collector current. The internal bias network includes resistors with nominal values of 10 kΩ for both the series base resistor (R1) and the base-emitter resistor (R2).

 

This series of digital transistors is designed to replace individual transistors and their external bias resistors. The device is Pb-free and halogen-free, complying with RoHS standards. Its integrated design makes it suitable for applications where space and component count reduction are critical.

SMMUN2211LT1G Quick Information

Product Type: NPN Pre-Biased Transistor
Canonical Name: SMMUN2211LT1G NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

SMMUN2211LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMMUN2211LT1G Estimated Pricing

Qty Low High
1+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMUN2211LT1G Features

  • Integrated NPN transistor with bias resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Surface mount SOT-23-3 package.
  • Simplifies circuit design and reduces component count.

SMMUN2211LT1G Applications

  • Ideal for digital logic circuits.
  • Reduces board space and component count.
  • Suitable for applications requiring bias networks.
  • Simplifies power management circuits.

SMMUN2211LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SMMUN2211LT1G?

The maximum collector-emitter voltage (VCEO) for the SMMUN2211LT1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for the SMMUN2211LT1G is 100 mAdc.

What package type is the SMMUN2211LT1G available in?

The SMMUN2211LT1G is available in a SOT-23-3 package.

What is the power dissipation rating?

The power dissipation rating for the SMMUN2211LT1G is 246 mW.

What is the DC current gain (hFE) of this transistor?

The DC current gain (hFE) is a minimum of 35 at 5mA collector current and 10V Vce.

What is the Vce saturation voltage?

The Vce saturation voltage is a maximum of 250mV at 300µA base current and 10mA collector current.

What are the internal bias resistor values?

The internal bias network includes a series base resistor (R1) and a base-emitter resistor (R2), both with nominal values of 10 kΩ.

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