| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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99,000 pcs
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99000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor SMMUN2134LT1G-M01 is a PNP pre-biased bipolar junction transistor designed for various electronic applications. It features a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 246mW.
This transistor includes an integrated base resistor with a nominal value of 47 kΩ. It exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 250mV at 1mA base current and 10mA collector current.
The SMMUN2134LT1G-M01 is supplied in a SOT-23-3 (TO-236) surface mount package, making it suitable for compact designs. Its RoHS status is compliant, and it has a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
The maximum continuous collector current is 100mA.
The power dissipation is 246mW.
It is supplied in a SOT-23-3 (TO-236) package for surface mounting.
The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V collector-emitter voltage.