DistyParts Icon
SMMUN2116LT3G The On Semiconductor SMMUN2116LT3G is a PNP pre-biased transistor designed for surface mount applications. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

SMMUN2116LT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SMMUN2116LT3G is a PNP pre-biased transistor designed for surface mount applications. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 100,000 pcs
$ Price Range: $0.99

SMMUN2116LT3G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
100,000 pcs
On Request
100000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SMMUN2116LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
View Similar Products (0)

SMMUN2116LT3G Description

Short technical summary and product information.

The On Semiconductor SMMUN2116LT3G is a PNP type pre-biased bipolar junction transistor (BJT) suitable for surface mount applications. This device integrates a transistor with a monolithic bias resistor network, simplifying circuit design and reducing component count.

 

Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It has a maximum power dissipation of 246 mW. The transistor features a minimum DC current gain (hFE) of 160 at 5mA and 10V, and a maximum Vce saturation of 250mV at 1mA and 10mA. The base resistor (R1) is 4.7 kΩ.

 

This component is housed in a TO-236-3, SC-59, SOT-23-3 package, designed for surface mounting. The device is Pb-free and Halogen-free, complying with RoHS standards.

SMMUN2116LT3G Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: On Semiconductor SMMUN2116LT3G PNP Pre-Biased Transistor
Subcategory: Single, Pre-Biased

SMMUN2116LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMMUN2116LT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMUN2116LT3G Features

  • PNP pre-biased bipolar transistor.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • 246mW maximum power dissipation.
  • Surface mount SOT-23-3 package.

SMMUN2116LT3G Applications

  • Used in low-power switching circuits.
  • Ideal for load driver and interface modules.
  • Suitable for relay and solenoid drivers.
  • Common in logic gate and inverter circuits.

SMMUN2116LT3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

50Vdc.

What is the maximum continuous collector current?

100mAdc.

What is the DC current gain (hFE)?

Minimum 160 at 5mA collector current and 10V collector-emitter voltage.

What is the base resistor value?

4.7 kΩ.

What is the maximum power dissipation?

246mW.

Is this component lead-free?

Yes, it is lead-free and halogen free.

What is the package type?

Surface mount SOT-23-3 (TO-236) package.

Home
Account

Categories