| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90,000 pcs
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90000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor SMMUN2116LT1G is a PNP pre-biased transistor (BRT) designed to integrate a single transistor with a monolithic bias resistor network. This integration simplifies circuit design, reduces board space, and lowers component count.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The device also features a minimum DC current gain (hFE) of 160 at 5mA and 10V, and a maximum Vce saturation of 250mV at 1mA and 10mA. The integrated base-emitter resistor has a nominal value of 4.7 kΩ.
This transistor is housed in a surface-mount SOT-23-3 (TO-236) package, making it suitable for compact electronic designs. It operates with a maximum power dissipation of 246 mW.
The SMMUN2116LT1G is Pb-free and halogen-free, complying with RoHS standards. Its design is intended to replace discrete transistors and external resistor networks, offering a cost-effective solution for various applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 Vdc.
Surface-mount SOT-23-3 (also known as TO-236-3 or SC-59).
4.7 kΩ.
160 at Ic = 5 mA, Vce = 10 V.
100 mAdc.
246 mW.
250 mV maximum at Ib = 1 mA, Ic = 10 mA.