SMMUN2114LT1G The ON Semiconductor SMMUN2114LT1G is a PNP Pre-Biased Transistor designed for surface mount applications. It offers a collector-emitter voltage of 50V and a continuous collector current of 100mA.
Mfr Part #:

SMMUN2114LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SMMUN2114LT1G is a PNP Pre-Biased Transistor designed for surface mount applications. It offers a collector-emitter voltage of 50V and a continuous collector current of 100mA.
✓ Total Stock: 1,964 pcs
$ Price Range: $0.99

SMMUN2114LT1G Available from 2 distributors

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SMMUN2114LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMMUN2114LT1G Description

Short technical summary and product information.

The ON Semiconductor SMMUN2114LT1G is a PNP Pre-Biased Transistor (BRT) featuring a monolithic bias resistor network. This integration simplifies circuit design, reduces board space, and lowers component count. It operates with a collector-emitter voltage of up to 50V and can handle a continuous collector current of 100mA.

 

The device is housed in a SOT-23-3 (TO-236) surface mount package, making it suitable for compact electronic designs. Key electrical characteristics include a maximum power dissipation of 246 mW at 25°C, a minimum DC current gain (hFE) of 80 at 5mA/10V, and a Vce saturation of 250mV at 300µA/10mA. The integrated resistors are R1 = 10 kΩ and R2 = 47 kΩ.

 

This transistor is Pb-free and Halogen-free, complying with RoHS standards. Its design makes it a versatile component for various digital and analog applications where space and component count reduction are critical.

SMMUN2114LT1G Quick Information

Product Type: PNP Pre-Biased Transistor
Series: SMMUN2114
Canonical Name: On Semiconductor SMMUN2114LT1G PNP Pre-Biased Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

SMMUN2114LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMMUN2114LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMUN2114LT1G Features

  • PNP Pre-Biased Transistor with integrated resistors.
  • 50V Collector-Emitter Voltage rating.
  • 100mA Continuous Collector Current.
  • SOT-23-3 surface mount package.
  • Pb-free and Halogen-free.

SMMUN2114LT1G Applications

  • Ideal for low-power switching circuits.
  • Used in signal amplification stages.
  • Suitable for portable electronic devices.
  • Reduces external component count.
  • Designed for automated PCB assembly.

SMMUN2114LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

50Vdc.

What is the maximum continuous collector current?

100mAdc.

What is the minimum DC current gain (hFE)?

80 at 5mA, 10V.

What are the integrated bias resistor values?

R1=10kΩ, R2=47kΩ.

What is the maximum power dissipation?

246mW at 25°C ambient temperature.

What package is the transistor available in?

SOT-23-3 (TO-236-3, SC-59) surface mount package.

What is the collector-emitter saturation voltage?

Maximum 250mV at 300µA base current and 10mA collector current.

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