| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor SMMUN2113LT1G is a PNP pre-biased transistor featuring a monolithic bias resistor network. This integrated design simplifies circuit construction by replacing discrete resistors and a single transistor, thereby reducing board space and component count.
Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It also features a maximum power dissipation of 246 mW and a nominal base-emitter resistor value of 47 kΩ. The DC current gain (hFE) is a minimum of 80 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA.
This device is supplied in a surface-mount SOT-23-3 (TO-236) package, making it suitable for compact electronic assemblies. The pre-biased nature simplifies design, making it a convenient choice for applications where space and component count are critical.
Compliance includes RoHS3, MSL 1, and REACH Unaffected, though these are noted as low confidence due to lack of verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The maximum continuous collector current is 100 mAdc.
The maximum power dissipation is 246 mW.
The package is SOT-23-3 (TO-236), surface mount.
The base-emitter resistor is 47 kΩ.
The minimum DC current gain is 80 at 5mA collector current and 10V collector-emitter voltage.
The maximum Vce saturation voltage is 250mV at 300µA base current and 10mA collector current.