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SMMUN2111LT1G The SMMUN2111LT1G is a PNP pre-biased transistor from On Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
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SMMUN2111LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SMMUN2111LT1G is a PNP pre-biased transistor from On Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 53,324 pcs
$ Price Range: $0.99

SMMUN2111LT1G Available from 4 distributors

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SMMUN2111LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
SVHC Present
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SMMUN2111LT1G Description

Short technical summary and product information.

The SMMUN2111LT1G is a PNP type, pre-biased bipolar junction transistor (BJT) manufactured by On Semiconductor. This device is designed for simplified circuit design, reduced board space, and component count reduction.

 

Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It offers a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. It also includes integrated bias resistors: R1 is 10 kOhms and R2 is 10 kOhms.

 

The transistor is housed in a surface-mount SOT-23-3 (TO-236) package, making it suitable for compact electronic designs. The maximum power dissipation is rated at 246 mW.

 

This series of digital transistors is designed to replace a single device and its external resistor bias network, integrating them into a single component.

SMMUN2111LT1G Quick Information

Product Type: PNP - Pre-Biased Transistor
Canonical Name: SMMUN2111LT1G PNP Pre-Biased Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

SMMUN2111LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMMUN2111LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMUN2111LT1G Features

  • PNP pre-biased transistor for simplified design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 10kΩ bias resistors.
  • Surface mount SOT-23-3 package.

SMMUN2111LT1G Applications

  • Used in switching applications.
  • Suitable for amplification circuits.
  • Applicable to low-power signal processing.
  • General-purpose switching tasks.

SMMUN2111LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SMMUN2111LT1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the package type for the SMMUN2111LT1G?

The package type is SOT-23-3 (TO-236).

What are the integrated bias resistor values?

The integrated bias resistors are R1 = 10 kOhms and R2 = 10 kOhms.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 35 at 5mA collector current and 10V Vce.

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