SMMJT350T3G The ON Semiconductor SMMJT350T3G is a PNP silicon bipolar power transistor designed for line-operated applications. It features a 300V collector-emitter voltage and 0.5A continuous current.
Mfr Part #:

SMMJT350T3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SMMJT350T3G is a PNP silicon bipolar power transistor designed for line-operated applications. It features a 300V collector-emitter voltage and 0.5A continuous current.
Total Stock: 4,000 pcs
$ Price Range: $0.51

SMMJT350T3G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

SMMJT350T3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Total Power Dissipation
Transistor Type
Voltage

SMMJT350T3G Description

Short technical summary and product information.

The ON Semiconductor SMMJT350T3G is a PNP silicon bipolar power transistor suitable for low power, line-operated series pass and switching regulator applications. It offers a high collector-emitter sustaining voltage of 300V and a continuous collector current of 0.5A.

 

This device has a power dissipation rating of 2.75W at 25°C (TC). It features excellent DC current gain and meets UL 94 V-0 standards for its epoxy material. The transistor is supplied in a SOT-223 (TO-261) surface mount package.

 

Key electrical characteristics include a minimum DC current gain of 30 at 50mA and 10V. The operating temperature range is -55°C to 150°C (TJ). The device is Pb-free and Halogen-free, complying with RoHS standards.

 

This transistor is designed for use in applications requiring PNP capability, such as in power supply circuits and voltage regulators where efficient switching and regulation are necessary.

SMMJT350T3G Quick Information

Product Type: Bipolar Power Transistor
Canonical Name: PNP Silicon Bipolar Power Transistor
Subcategory: PNP

SMMJT350T3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

SMMJT350T3G Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMJT350T3G Features

  • PNP silicon bipolar power transistor.
  • 300V collector-emitter voltage rating.
  • 0.5A continuous collector current.
  • 2.75W maximum power dissipation.
  • Surface mount SOT-223 package.

SMMJT350T3G Applications

  • Low power line-operated applications.
  • Series pass voltage regulators.
  • Switching regulator circuits.
  • Applications requiring PNP capability.

SMMJT350T3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SMMJT350T3G?

The maximum collector-emitter voltage is 300 Vdc.

What is the continuous collector current rating?

The continuous collector current is 0.5 Adc.

What is the power dissipation of the SMMJT350T3G at 25°C (TC)?

The total power dissipation at TC = 25°C is 2.75 W.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What is the minimum DC current gain (hFE) at 50mA, 10V?

The minimum DC current gain (hFE) is 30 at 50mA, 10V.

What type of transistor is the SMMJT350T3G?

The SMMJT350T3G is a PNP silicon bipolar power transistor.

What package is the SMMJT350T3G supplied in?

The SMMJT350T3G is supplied in a SOT-223 (TO-261) package.

Home
Account

Categories