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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
81,000 pcs
|
81000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Total Power Dissipation | |
| Transistor Type | |
| Voltage |
The SMMJT350T1G is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring a collector-emitter voltage rating of 300V and continuous collector current of 0.5A.
The transistor features a DC current gain (hFE) of minimum 30 at 50mA collector current and 10V Vce. Total power dissipation is 2.75W at case temperature 25°C, with a derated power of 650 mW. Operating junction temperature range is -55°C to 150°C.
The device is housed in a TO-261-4 (SOT-223) surface mount package, suitable for automated assembly. It is lead-free and halogen-free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
300 Vdc.
0.5 Adc.
-55°C to 150°C (junction).
TO-261-4 (SOT-223) surface mount.
Yes, it is Pb-Free and halogen-free.
Minimum hFE of 30 at 50mA Ic and 10V Vce.
2.75W at case temperature 25°C.