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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
160,000 pcs
|
160000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| DC Current Gain (Minimum/Typical/Maximum @ IC = 4.0 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature Range | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Total Device Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Total Device Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Transistor Type | |
| Voltage |
The SMMBTH10-4LT3G is an NPN silicon RF transistor manufactured by ON Semiconductor. It is designed for VHF/UHF applications and features a maximum collector-emitter voltage of 25V and a frequency capability of 800MHz.
Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 4mA and 10V, with a typical gain of 120 and a maximum of 240. The collector-emitter saturation voltage is a maximum of 0.5V, and the base-emitter on voltage is a maximum of 0.95V.
This device is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It operates within a junction and storage temperature range of -55°C to +150°C. The transistor is Pb-free and Halogen-free, complying with RoHS standards.
With a total power dissipation of 225mW on an FR-5 board, the SMMBTH10-4LT3G is suitable for various RF amplification and switching applications in consumer electronics and communication systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 25Vdc.
The component utilizes a SOT-23-3 surface-mount package.
The junction and storage temperature range spans from -55°C to +150°C.
The device supports a nominal operating frequency of 800MHz.
The DC current gain ranges from a minimum of 60 to a maximum of 240 at 4mAdc and 10Vdc.
Total device dissipation is rated at 225mW on an FR-5 board and 300mW on an alumina substrate.