SMMBTA56LT1G The SMMBTA56LT1G is a PNP silicon transistor from ON Semiconductor. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
Mfr Part #:

SMMBTA56LT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SMMBTA56LT1G is a PNP silicon transistor from ON Semiconductor. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
✓ Total Stock: 370,035 pcs
$ Price Range: $0.51

SMMBTA56LT1G Available from 5 distributors

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200,000 pcs
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900 pcs
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900 pcs $0.25
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115 pcs
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SMMBTA56LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMMBTA56LT1G Description

Short technical summary and product information.

The SMMBTA56LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed for various applications requiring a robust transistor with a breakdown voltage of 80V and a continuous collector current capability of 500mA.

 

Key electrical characteristics include a DC current gain (hFE) of 100 at 100mA and 1V, and a current-gain bandwidth product (fT) of 50MHz. The collector-emitter saturation voltage is a maximum of 250mV at 10mA base current and 100mA collector current.

 

This transistor is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. The operating temperature range is from -55°C to 150°C.

 

The SMMBTA56LT1G series is Pb-free and Halogen-free, complying with RoHS and BFR standards. The 'S' prefix indicates suitability for automotive applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

SMMBTA56LT1G Quick Information

Product Type: Transistor
Series: MMBTA56L Series
Canonical Name: SMMBTA56LT1G PNP Silicon Transistor
Subcategory: Single PNP

SMMBTA56LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

SMMBTA56LT1G Estimated Pricing

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1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMBTA56LT1G Features

  • PNP silicon bipolar junction transistor.
  • Maximum 80V collector-emitter voltage.
  • Continuous collector current of 500mA.
  • Surface mount SOT-23-3 package.
  • Pb-free and Halogen-free compliance.

SMMBTA56LT1G Applications

  • General purpose amplification circuits.
  • Switching applications.
  • Automotive control modules.
  • Power supply circuits.

SMMBTA56LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SMMBTA56LT1G?

The maximum collector-emitter voltage is -80 Vdc.

What package type does the SMMBTA56LT1G use?

It is available in a surface-mount SOT-23-3 (TO-236) package.

What is the operating temperature range of the SMMBTA56LT1G?

The operating junction temperature range is -55°C to 150°C.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain is 100 at IC=100mA and VCE=1V.

What is the transition frequency of the SMMBTA56LT1G?

The minimum current-gain bandwidth product (fT) is 50 MHz.

Is the SMMBTA56LT1G lead-free?

Yes, it is verified as lead-free (Pb-Free) per the datasheet.

Is the SMMBTA56LT1G halogen-free?

Yes, it is verified as halogen-free (BFR-Free) per the datasheet.

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