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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
48,000 pcs
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48000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum @ 10 mAdc, 5.0 Vdc) | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SMMBTA13LT1G is an NPN Silicon Darlington amplifier transistor manufactured by On Semiconductor. It is designed for applications requiring high current gain, with a DC current gain (hFE) of 10000 at 100mA and 5V. The device can handle a continuous collector current of up to 300mA and has a collector-emitter voltage rating of 30V.
This transistor operates within a wide temperature range of -55°C to 150°C. It is supplied in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. The device is Pb-Free and Halogen Free, adhering to modern environmental standards.
Key electrical characteristics include a Vce saturation voltage of 1.5V at 100µA/100mA and a frequency capability of 125MHz. The total device dissipation is rated at 225 mW on an FR-5 board at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 30Vdc.
The device is packaged in SOT-23-3 (also known as TO-236-3, SC-59).
Operating junction temperature range is -55°C to 150°C.
The minimum DC current gain (hFE) is 10000 at 100mA collector current and 5V Vce, and 5000 at 10mA and 5V Vce.
The transition frequency is 125MHz.
The collector-emitter saturation voltage is 1.5V maximum at 100µA base current and 100mA collector current.
Total device dissipation is 225mW on an FR-5 board at 25°C.